central semiconductor corp. tm process cp314 small signal transistor npn - high current transistor chip central semiconductor corp. tm principal device types cbcp68 cbcx68 czt651 mps650 mps651 process epitaxial planar die size 40 x 40 mils die thickness 9.0 mils base bonding pad area 7.9 x 8.7 mils emitter bonding pad area 9.0 x 14 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com backside collector geometry r3 (8-october 2008) gross die per 4 inch wafer 6,936
central semiconductor corp. tm process cp314 typical electrical characteristics central semiconductor corp. tm 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (8-october 2008)
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